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1 article(s) from Müller, Merlin

Si₃N₄-coating

Dirk König,
Daniel Hiller,
Noël Wilck,
Birger Berghoff,
Merlin Müller,
Sangeeta Thakur,
Giovanni Di Santo,
Luca Petaccia,
Joachim Mayer,
Sean Smith and
Joachim Knoch

Beilstein J. Nanotechnol. 2018, 9, 2255–2264, doi:10.3762/bjnano.9.210

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Figure 1: Energy offsets with SiO₂- and Si₃N₄-embedding for one Si₁₀-NC (0.8 nm size) embedded in SiO₂ and th...

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Figure 2: Evolution of energy offsets for SiO₂- and Si₃N₄-embedded Si₁₀-NCs (0.8 nm size) as a function of em...

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Figure 3: Structures of samples investigated by synchrotron UPS: (a) Si-reference, (b) 1.7 nm Si-NWell in Si₃N...

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Figure 4: Cross-section HR-TEM images of samples QW-17-N (a), QW-17-O (b) and QW-26-N (c). Semi-transparent s...

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Figure 5: Experimental evidence of HOMO ΔE by synchrotron UPS: (a) scans of NWell samples and a hydrogen-term...

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Figure 6: Electronic properties obtained by h-DFT for Si₂₃₃(NH₂)₈₇(OH)₈₁ NWire of 1.4 nm diameter and 5.2 nm ...

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Figure 7: Concept of an undoped FET consisting of a Si-NWire with drain/gate (channel)/source regions covered...

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Figure 8: NEGF simulation results of undoped Si-NWire-FET illustrated in Figure 7: (a) gate-wrap-around Si-NWire FET ...

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Full Research Paper

Published 23 Aug 2018

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Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating

Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO₂/Si₃N₄-coating